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Substrates

  • Alumina (          ), typical 96% but available from 91-99.6%)

  • BeO (Beryllium Oxide)

  • AlN (Aluminum Nitride)

  • Exotic substrates (Ferrite, Quartz, Pink Diamonite, Lithium Niobate, Sapphire)

  • Thicknesses:  5-100 mils (0.005” - 0.100”), 25 mils typical

  • Size:  up to 12” square (305mm)

  • Shapes:  All shapes available; CO2 Numerically Controlled Laser allows any shapes and sizes

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Al O

2

3

The selection of substrate is based on numerous factors including thermal conductivity, cost, dielectric power dissipation, and environmental considerations:

Material

Alumina

Designation

Description

Type

Al O

2

3

  • Most commonly used substrate

  • Good thermal conductivity

  • Most economical material

96% 
Also, 91% to 99.6%

Aluminum Nitride 

AlN

  • Better thermal conductivity than alumina 

  • Similar dielectric to Alumina and similar power dissipation to BeO

>99%

Beryllium Oxide

BeO

  • Best thermal conductivity

  • Conducts heat almost as well as copper

99.6% BeO

Exotic Substrates

Various

  • Best thermal conductivity

  • Conducts heat almost as well as copper

Various

Property

Units

Alumina

AlN

BeO

Dielectric Constant  (1MHz @ RT)

Dielectric loss          (1MHz @ RT)

-

-

9.8

0.0001

8.9

0.0005

6.7

0.004

Electrical Resistivity

 Ohm-cm

>10

14

>10

14

14

Thermal conductivity @ T=.040 in.

 W/m K

36

170-190

260

Coefficient of Thermal Expansion

 ppm/ºC 

8.2

4.6

8.5

Density

 g/cm

2.89

3.3

3.85

Bending Strength

Hardness (knoop)

mPa

GPa

380

14.1

290

11.8

230

9.8

Youngs Modulus

 GPa

372

331

345

3

>10

Conductors

Common conductors listed; other alloys available -

  • Screened Gold

  •  0.005” lines and spaces:  4 milliohms / â–¡ resistivity

  •  Wire bondable

  •  Low resistance runs

  • Etched 99.9% Gold

  • 0.001” lines and spaces:  2.8 milliohms / â–¡ resistivity

  • Outstanding performance to 80 GHz

  • Wire bondable

  • Platinum/gold

  • 0.005” lines and spaces:  80 milliohms / â–¡ resistivity

  • Solderable (excellent aged adhesion with no migration)

  • Wire bondable

  • Palladium/silver

  • 0.005” lines and spaces:  35 milliohms / â–¡ resistivity

  • Solderable (good aged adhesion general purpose)

  • Wire bondable

  • Silver

  • 0.005” lines and spaces:  3 milliohms / â–¡ resistivity

  • Aluminum wire bondable

  • Print-through holes

  • 0.006" diameter (1/3 substrate thickness)

Conductors

Resistors

  • Laser trimming, solder dipping

  • Load life:  1,000 hours

  • Stability >0.3% total (less than 0.3% drift from all environmental factors: Laser Trim, Solder Dip, 1,000-hour Load Life, temperature cycling, etc.)

Resistance Range

TCR

Tolerance

Power Density

< 20 ohms

20Ω to 100K ohm

±100 ppm/ºC

±50 ppm/ºC

±0.25%

100K Ω to 100M ohms

±100 ppm/ºC

100M Ω to 2G ohms

±250 ppm/ºC

100 watts/in  dissipation

2

±0.50%

200 watts/in  dissipation

2

±0.50%

±2.00%

50 watts/in  dissipation

2

50 watts/in  dissipation

2

Resistors

Dielectric

  • Dielectric breakdown > 400 AC Volts/mil.

  • Low K dielectric allows up to 12 conductor layers (K=6, breakdown >400 VAC)

  • High K dielectric allows capacitor formation (0.1 µF/in2 maximum)

  • Ultra-low Loss dielectric available for microwave applications

Dielectric

Assembly

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  • Solder Reflow

    • Leadless chip carriers, S.O. (Small Outline) Packages, Discrete devices, Capacitors, Inductors

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  • Chip and Wire

    • 0.0007" to 0.002" (0.7 to 2 mils) Gold thermosonic ball bonding

    • Epoxy and Eutectic die attach

    • Moly tab high temperature solder mount

    • 0.001" to 0.010" (1 to 10 mils) Aluminum ultrasonic wedge bonding

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  • Packaging

    • Hermetic packages: welded Metal cans, soldered Ceramic

    • Epoxy sealed Ceramic and Plastic enclosures, custom shapes

    • Conformally Coated Epoxy or Silicone DIPs and SIPs

    • Standard and Custom fabricated Heat Sinks

​​

  • Discrete Components

    • Semiconductors:

      • Bipolar, ECL, MOS Gate Arrays, FETs

    • Capacitors:

      • Chip:  5pF to 0.5uF, NPO through Z5U, up to 50V  

      • Tantalum Capacitors:  0.1uF to 50uF, up to 25V

      • Variable Capacitors:  1 pF to 100 pF

    • Resistors:

      • Chip:  Thin Film, tight tolerance, low TCR

    • Inductors & Chip Inductors:

      • Standard products and custom-wound cores are available

Assembly
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